PART |
Description |
Maker |
GS71108TP-10 GS71108TP-12 GS71108TP-12I GS71108TP |
15ns 128K x 8 1Mb asynchronous SRAM 12ns 128K x 8 1Mb asynchronous SRAM 10ns 128K x 8 1Mb asynchronous SRAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32 0.400 INCH, SOJ-32 128K X 8 STANDARD SRAM, 12 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48 128K X 8 STANDARD SRAM, 12 ns, PDSO32 0.300 INCH, SOJ-32 128K X 8 STANDARD SRAM, 15 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48 128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
GSI[GSI Technology] GSI Technology, Inc.
|
IS61NVP102436A IS61NVP102436A-166B3 IS61NVP102436A |
1Mb x 36 and 2Mb x 18 STATE BUS SRAM 1M X 36 STANDARD SRAM, PBGA165 PLASTIC, BGA-165 1M X 36 STANDARD SRAM, PDSO100 TQFP-100 2M X 18 STANDARD SRAM, PBGA165
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC Integrated Silicon Solu...
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MT58L32L32P MT58L32L36P MT58L64L18P |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,单循环取消选择,同步脉冲静态存储器) 32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,单循环取消选择,同步脉冲静态存储器) 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,单循环取消选择,同步脉冲静态存储器) 64K的18.3V的I / O的流水线,SCD的SyncBurst的SRAM兆,3.3V的输输出,流水线式,单循环取消选择,同步脉冲静态存储器
|
Micron Technology, Inc.
|
MT58L32L32D MT58L32L36D MT58L64L18D |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,双循环取消选择,同步脉冲静态存储器) 64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,双循环取消选择,同步脉冲静态存储器) 32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,双循环取消选择,同步脉冲静态存储器) 32KX82,3.3 O的流水线,双氰胺SyncBurst的SRAM兆,3.3V的输输出,流水线式,双循环取消选择,同步脉冲静态存储器
|
Micron Technology, Inc. Micrel Semiconductor, Inc.
|
DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS204 |
Single-Piece 1Mb Nonvolatile SRAM
|
Dallas Semiconductor
|
GS71116ATP-8I |
8ns 64K x 16 1Mb asynchronous SRAM
|
GSI Technology
|
A0A16 |
Low Power Slow SRAM - 1Mb
|
Hynix Semiconductor
|
L083WC2AT2 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
NanoAmp Solutions, Inc.
|
M36W108AB M36W108AB100ZM1T M36W108AB100ZM5T M36W10 |
8 MBIT (1MB X8, BOOT BLOCK) FLASH MEMORY AND 1 MBIT (128KB X8) SRAM LOW VOLTAGE MULTI-MEMORY PRODUCT 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Memory 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product From old datasheet system
|
ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
N01L163WC2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
MPC2105A MPC2106ASG66 MPC2105B |
(MPC2105x / MPC2106x) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE TAG SRAM MODULE, 9 ns, DMA178 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KBMB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola, Inc. Motorola Mobility Holdings, Inc.
|
HY62U8100B-E HY62U8100B-I HY62U8100BLLG HY62U8100B |
Low Power Slow SRAM - 1Mb 128K x8 bit 3.0V Low Power CMOS slow SRAM x8|3V|70/85/100|Low Power Slow SRAM - 1M
|
Hynix Semiconductor
|